• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barrier metal having a structure of Ti / TiON / TiO 2 and a method of manufacturing the same. The present invention provides reliability and yield of semiconductor devices by preventing junction spiking and improving metal contact resistance. Contribute to improvement
    公开号:KR19980057055A
    申请号:KR1019960076325
    申请日:1996-12-30
    公开日:1998-09-25
    发明作者:김영우；김천수
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Barrier Metals for Semiconductor Metallization and Forming Method Thereof
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly, to a barrier metal having a novel structure of metal wiring and a method of manufacturing the same. As the degree of integration of semiconductor devices increases, the number of conductive wires and insulating films that are hit increases, thereby deepening the contact depth for connecting each conductive wire and the last metal layer that controls the conductive wires. In the case of such deep contacts, the aspect ratio is usually about 1-2. Meanwhile, in the metallization process, the metal wire is applied to prevent junction spiking occurring at the contact portion between the metal wire and the silicon substrate. Before the barrier metal is formed, the conventional barrier metal mainly has a Ti / TiN structure, and a method of bringing the barrier metal thicker with a high aspect ratio due to the high integration of the device is mainly introduced, but due to frequent failures. There is a need for a way to improve this. In addition, there is a need to control the contact resistance even lower.
    SUMMARY OF THE INVENTION An object of the present invention is to provide a barrier metal for semiconductor metal wiring and a method for forming the same, which contribute to the improvement of the reliability and yield of semiconductor devices by preventing junction spiking and improving metal contact resistance.
    1a to 1c is a barrier metal forming process according to an embodiment of the present invention.
    * Explanation of symbols for main parts of the drawings
    1 silicon substrate 2 insulating film
    3: TI 4: TiON
    5: TiO 2
    The semiconductor device of the present invention includes a barrier metal made of Ti, TiON, and TiO 2 that are sequentially stacked on a wafer on which metal contact holes are formed, in order to prevent junction spiking in the contact region of the metal line and the semiconductor substrate. Hereinafter, with reference to the accompanying drawings will be described in detail the present invention. First, as shown in FIG. 1C, the barrier metal of the present invention has a structure in which Ti (3), TiON (4), and TiO 2 (5) are sequentially stacked on the front surface of the wafer on which metal contact holes are formed. Such a structure is excellent in preventing joint spiking and lowers contact resistance. A barrier metal forming method having such a structure will be described with reference to FIGS. 1A to 1C. FIG. 1A is a state in which the Ti film 3 is sputtered and deposited on the entire surface of the wafer where the insulating film 2 is etched and the silicon substrate 1 is exposed, and at 30 to 80 sccm at a temperature of 50 to 150 ° C. and a power of 1 to KW. Ar gas plasma is used to sputter deposit Ti from the Ti target provided in the apparatus. At this time, the thickness is formed to a thickness of 200 ~ 600Å. 1B is a state in which the TiON film 4 is sputter deposited and deposited on the Ti film 3, and 150 to 500 sccm of Ar gas and 20 to 100 sccm at a temperature of 50 to 150 ° C. and a power of 4 to 8 kW. using the N2 gas and 1~5 sccm of O 2 gas plasma while sputtering the Ti from the Ti target provided in the apparatus to deposit a TiON film 4. At this time, the thickness is formed to a thickness of 500 ~ 1200Å. 1C is a state in which the TiO 2 film 5 is sputtered and deposited on the TiON film 4, and 30 to 80 sccm of Ar gas and 1 to 5 sccm at a temperature of 50 to 150 ° C. and a power of 1 to 4 KW. The TiO2 film 5 is deposited while sputtering Ti from the Ti target provided in the apparatus by using the O 2 gas plasma. At this time, the thickness is formed to a thickness of 300 ~ 700Å. Here, each Ti / TiON / TiO 2 is processed in-situ in one chamber or two chambers. As described above, according to the present invention, the barrier metal of the conventional Ti / TiN structure is changed to the structure of Ti / TiON / TiO 2 , thereby bringing about the prevention of junction spiking and contact resistance, which are inherent to the barrier metal. . The use of the TiON thin film enhances the barrier properties by increasing the specific resistance, as well as improving the corrosion problem with the wiring metal (Al) and lowering the overall contact resistance by using the TiO 2 thin film.
    The present invention is excellent in the prevention of junction spiking and lowers the contact resistance, contributing to the improvement of the reliability and yield of the semiconductor device.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] A semiconductor device comprising a barrier metal made of Ti, TiON, and TiO 2 sequentially stacked on a wafer on which a metal contact hole is formed, in order to prevent junction spikes occurring in a contact region of a metal line and a semiconductor substrate.
    [2" claim-type="Currently amended] The semiconductor device according to claim 1, wherein the Ti, TiON, and TiO 2 have thicknesses of 200 to 600 kPa, 500 to 1200 kPa, and 300 to 700 kPa, respectively.
    [3" claim-type="Currently amended] Forming a Ti film on a wafer on which a metal contact hole is formed by sputtering, sputtering and depositing a TiON film on the Ti film, and sputtering depositing a TiO 2 film on the TiON film. Metal formation method.
    [4" claim-type="Currently amended] 4. The method of claim 3, wherein each of Ti, TiON, and TiO 2 proceeds in an in-situ process.
    [5" claim-type="Currently amended] The TiON film according to claim 3, wherein the TiON film is formed from a Ti target provided in the apparatus by using an Ar gas of 150 to 500 sccm, an N 2 gas of 20 to 100 sccm and an O 2 gas plasma of 1 to 5 sccn at a temperature of 50 to 150 ° C. A method of forming a barrier metal for semiconductor metal wiring, characterized in that the deposition while sputtering.
    [6" claim-type="Currently amended] The TiO 2 film is deposited by sputtering Ti from a Ti rudder provided in a device using 30 to 80 sccm of Ar gas and 1 to 5 sccm of O 2 gas plasma at a temperature of 50 to 150 ° C. A method of forming a barrier metal in a semiconductor metal wiring, characterized in that the.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-30|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-30|Priority to KR1019960076325A
    1998-09-25|Publication of KR19980057055A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960076325A|KR19980057055A|1996-12-30|1996-12-30|Barrier Metals for Semiconductor Metallization and Forming Method Thereof|
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